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SGL60N90D
FEATURES
* High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at IC=60A) * High Input Impedance TO-264
IGBT CO-PAK
1
APPLICATIONS
* Home Appliance - Induction Heater - IH JAR - Micro Wave Oven
C
G E
ABSOLUTE MAXIMUM RATINGS Symbol
VCES VGE IC
Characteristics
Collector-Emitter Voltage Gate - Emitter Voltage Continuous Collector Current TC = 25C TC = 100C
Rating
900 25 60 42 120 TC = 25C TC = 100C 200 120 -55 ~ 150
Unit
V V A A W C C
ICM (1) PD
Pulsed Collector Current Maximum Power Dissipation
TJ TSTG TL
Operating Junction Temperature Storage Temperature Range Soldering maximum lead temperature (1/8" from case for 10 seconds) 300
Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature
Rev.B
(c)1999 Fairchild Semiconductor Corporation
SGL60N90D
ELECTRICAL CHARACTERISTICS (TC=25C)
Symbol
BVCES VGE(th) ICES IGES VCE(sat)
IGBT CO-PAK
Characteristics
C - E Breakdown Voltage G - E threshold voltage Collector cutoff Current G - E leakage Current Collector to Emitter
Test Conditions
VGE = 0V , IC = 1mA IC =60mA , VCE = 10V VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V VGE = 15V, IC =60A
Min Typ
900 4.5 -
Max Units
7.5 1.0 500 3.5 V V mA nA V
2.7
saturation voltage Cies Coes Cres ton tr toff tf VEC trr Input capacitance Output capacitance Reverse transfer capacitance Turn on time Rise time Turn off time Fall time Emitter-Collector Voltage Reverse recovery time VCC = 600V , IC = 60A VGE = 15V RG = 51 Resistive load IE = 15A IE = 15A, die/dt = -100A/s VGE = 0V , f = 1MHz VCE = 10V 4500 800 200 350 250 500 250 1.5 0.7 800 600 1000 400 2.0 2.0 pF pF pF ns ns ns ns V s
THERMAL RESISTANCE
Symbol
RJC RJC
Characteristics
Junction-to-Case : IGBT Junction-to-Case : Diode
Min
-
Typ
-
Max
0.625 4.0
Units
C/W C/W
SGL60N90D
300 : Tj = 25[] : Tj = 125[] 250 20V
\B^
IGBT CO-PAK
5 VGE=10V,15V,20V
4
Tj = 125[]
Collecot Current [A]
200
15V
D v ssfo u - Jd D p mmf d u p s
3
150 10V 100
2 Tj = 25[] 1
50
0
0
1
2
3
4
5
6
7
0 0.0
0.2
Collector-Emitter Voltage,VCE[V]
0.4 0.6 Collector-Emitter Voltage, VCE[V]
0.8
1.0
OUTPUT CHARACTERISTICS
20 0 V C E = 10[V ]
1 20
T j = 1 2 5 [ ]
Ic , C o lle c t o r C u r r e n t [ A ]
15 0
F O R W A R D C U R R E N T [A ]
T j = 1 2 5 [ ]
1 00
80
10 0
60
T j = 25 [
]
40
50
T j = 25[
]
12
20
0
0
2
4
6
8
10
0 0 .0
0 .5
V g e , G a t e - E m it t e r V o lt a g e [ V ]
1 .0 1 .5 F O R W A R D V O L T A G E [V ]
2 .0
2 .5
T ra n s f e r C h a ra c te r is t ic s
D IO D E C U R R E N T vs F O R W A R D V O L T A G E
10 4
Vce, Collector Em itter Voltage [V]
Cies
600
20
500 600V 15 400 450V 300V 10
Vge, Gate Voltage [V]
Capacitance [ ]
10 3
Coes Cres
10 2
300
200 5 100
Vge=0[V] f = 1[ ] Tc = 25 [] 10 1 0 5 10 15 20
Rg=51[] RL=10[ ] Tc=25[ ]
0 50 100 150 200 250 0 300
0
Collector - Emitte r Voltage [V]
GATE CHARGE Qg [nC]
SGL60N90D
800n 700n 3.0m
IGBT CO-PAK
Vcc = 600[V] Ic = 34[A] Vge = Tc = 25[&]
15[V]
td o ff
2.5m
Vcc = 600[V] Ic = 34[A] 15[V] Vge = Tc = 25[&]
Eo n
T x jud i jo h U jn f \ t ^
600n 500n
tr
T x jud i jo h M p t t \K ^
2.0m
400n
tf
1.5m
300n 200n
td o n
1.0m
E o ff
100n 0
500.0
30
40
50
60
70
80
90
100
30
40
50
60
70
80
90
100
G a te R e s i s ta n c e [+ ]
G a te R e s i s ta n ce [+ ]
700n
5.5m
600n
Vcc = 600[V] Ic = 60[A] Vge = Tc = 25[&]
15[V]
5.0m
td o ff tr
Vcc = 600[V] Ic = 60[A] 15[V] Vge= Tc =25[&]
Eo n
Tx jud i jo h U jn f\t^
500n
T x ju d i jo h M p t t \K ^
4.5m 4.0m 3.5m 3.0m 2.5m 2.0m
400n
tf
300n
td o n
200n
E o ff
100n
1.5m 1.0m 30 40 50 60 70 80 90 100
G a te R e s i s ta n ce [+ ]
0
30
40
50
60
70
80
90
100
G a te R e s i s ta n c e [+ ]
1 90 0n
Vc c = 600[V ] Ic = 110[A] Vg e = 15[V ] T c = 25[& ]
20.0m
T x ju d i jo h U jn f \ t ^
tr
80 0n
V = 600[V] cc Ic = 110[A] V= ge Tc = 25[& ]
15.0m
15[V]
Eon
70 0n 60 0n 50 0n 40 0n 30 0n 20 0n 10 0n 0 30 40 50 60 70 80 G a t e Re s i s t a n c e R g [+ ]
Switching Loss [J]
td o f f
10.0m
tf
td o n
Eoff 5.0m
90
10 0
0.0 30
40
50
60
70
80
90
100
Gate Resistance [+]
SGL60N90D
IGBT CO-PAK
srr bb
sr
s
srr*
sr* bb
srr
stw& (c)sw (c)wsI
sr
sr
s
s
sr srr obb
srrr
s
sr
srr obb
srrr

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEXTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANAR TM MICROWIRETM POPTM PowerTrenchTM QSTM QuietSeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can be systems which, (a) are intended for surgical implant reasonably expected to cause the failure of the life support into the body, or (b) support or sustain life, or (c) whose device or system, or to affect its safety or effectiveness. failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
LIFE SUPPORT POLICY Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later data. Fairchild Semiconductor reserves the right to make changes at any time without notices in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

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